IRGB6B60KPbF transistor equivalent, insulated gate bipolar transistor.
* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient.
* Lead.
E MB L Y L OT COD E
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IN T E R NAT IONAL R E .
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